[摘要]：The non-local spin injection in lateral spin valves is strongly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin-valve voltage, which determines the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 mu V. Here we show that lateral spin valves with low-resistivity NiFe/MgO/Ag junctions enable efficient spin injection with high applied current density, which leads to the spin-valve voltage increasing 100-fold. Hanle effect measurements demonstrate a long-distance collective 2 pi spin precession along a 6-mu m-long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin-current-based memory, logic and sensing devices.
