[摘要]：In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin him by ambient pressure chemical vapor deposition on polycrystalline Ni films Depending on the growth conditions, the thickness of the obtained h-BN film is between similar to 5 and 50 nm. The h-ON grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 mu m in lateral size which is only limited by the size of the Ni single crystal grains The hexagonal structure was confirmed by both electron and X-ray diffraction X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1112 angstrom large optical band gap (5 92 eV) was obtained from the photoabsorpoon spectra which suggest the potential usage of this h-ON film in optoelectronic devices
