Growth of Stacking-Faults-Free Zinc Blende GaAs Nanowires on Si Substrate by Using AlGaAs/GaAs Buffer Layers

[摘要]：Vertical GaAs nanowires on Si (1 1 1) substrate were grown by metal organic chemical vapor deposition via Au-catalyst vapor-liquid-solid mechanism. Stacking-faults-free zinc blende nanowires were realized by using AlGaAs/GaAs buffer layers and growing und

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