[摘要]：ZnO nanorod strain driving transistor (SDT) with 10(7) scale "on"-"off" ratio has been fabricated on Kapton substrate by a single-step hydrothermal reaction. The transistor is driven by strain due to the change in Schottky barrier height caused by piezoelectric effect as well as the change of contact area between ZnO bridging nanorods. Moreover, via utilizing two SDTs on the top and bottom surfaces of the substrate as two complementary metal-oxide-semiconductor transistors, several logic operations such as inverter, NAND, NOR, XOR, MUX, and DEMUX with good rectifying behaviors have been demonstrated. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3526719]
