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Large thermal Hall coefficient in bismuth - art. no. 011903

  作者 Kobayashi, W; Koizumi, Y; Moritomo, Y  
  选自 期刊  Applied Physics Letters;  卷期  2012年100-1;  页码  11903-11903  
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[摘要]We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673562]

 
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