[摘要]：We report on RISE-EWT (Rear Interdigitated Single Evaporation-Emitter Wrap-Through) solar cells on full area (12.5 x 12.5 cm(2)) pseudo square boron doped Czochralski-grown silicon wafers. We investigate the main efficiency optimisation factors of these cells by investigating the dependence of RISE-EWT cell parameters on the base dopant concentration N(A). We furthermore detail the effects of large feature sizes in base and emitter regions at the rear of the solar cell and investigate these effects with particular attention to the edge regions. EWT solar cells typically exhibit rather low fill factors. However, our results show that the improved fill factors can be achieved by increasing N(A), which in return leads to optimised efficiency values. For our RISE-EWT solar cells made from boron doped Cz-Si wafers, this benefit is maintained even after light-induced degradation. Our investigation of edge area related effects shows the importance of proper cell design in these areas, leading to a further 2.8% absolute improvement in the fill factor. Combining increased base dopant concentration with optimised edge design, we achieve 19.0% efficiency on (12.5 X 12.5 cm(2)) boron doped Cz silicon wafers before light-induced degradation, resulting in 18.1% efficiency in the light-degraded state. (C) 2010 Elsevier B.V. All rights reserved.
