Ga induced superstructures as templates for lattice matched hetroepitaxial growth of GaN on Si(111) substrate

[摘要]：High quality GaN is grown by plasma assisted molecular beam epitaxy on Ga induced superstructural phases of Si(111)7 X 7. Three stable surface phases induced by Ga adsorption, viz., (1 X 1), (6.3 X 6.3), and (root 3 X root 3)R30 degrees, are employed as t

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