[摘要]：Cu(2)ZnSnS(4) thin films have been successfully prepared by a novel synthesis process that involves a single step deposition of Cu(2)ZnSnS(4) followed by a post-annealing treatment at 550 degrees C for 60 min in the atmosphere of N(2)+H(2)S (5%). The microstructure, morphology, composition and optical property of the film have been investigated in detail. It is found that the Na(2)S(2)O(3)center dot 5H(2)O concentration in the solution has a significant effect on the Cu(2)ZnSnS(4) thin films. X-ray diffraction data indicates that the annealed Cu(2)ZnSnS(4) thin films have a kesterite structure with preferred orientation along the (1 1 2) plane. Uniform and compact topographies are observed in some annealed films. From the energy dispersive X-ray spectroscopy analysis, it can be seen that Cu-poor and Zn-rich Cu(2)ZnSnS(4) thin films have been obtained. The direct band gap energy of the film is about 1.5 eV. 2011 Elsevier B.V. All rights reserved.
