Direct integration of active Ge1-x(Si4Sn)(x) semiconductors on Si(100)

[摘要]：Doped and intrinsic Ge1-x-ySixSny alloys are synthesized directly on Si(100) using simple deposition chemistries and their optical and electrical properties are determined. Tuning the Si/Sn ratio at similar to 4 yields strain-free films with Ge-like cell

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