Photocapacitance spectroscopy study of deep-level defects in freestanding n-GaN substrates using transparent conductive polymer Schottky contacts - art. no. 023001

[摘要]：We have investigated electronic deep levels in freestanding n-GaN substrates grown by hydride vapor phase epitaxy (HVPE) by means of a steady-state photocapacitance spectroscopy technique using transparent conductive polyaniline Schottky contacts. Two spe

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