[摘要]：A finite element simulation was used to estimate the temperature distributions within AlGaN/GaN high electron mobility transistors (HEMTs) during the laser lift-off process. The time-dependent simulation showed that a thin layer of GaN at the GaN/sapphire interface was heated up to around 1600 K in less than 25 ns by a pulsed laser exposure with a duration of 25 ns and a fluence of 800 mJ/cm(2) to decompose this GaN layer into Ga and nitrogen. Experimentally, there was a threshold fluence around 550 mJ/cm(2), corresponding to 1300 K at the GaN/sapphire interface, for partially lifting off the HEMT structure from the sapphire. The simulated temperature at the GaN/sapphire interface with a fluence of 420 mJ/cm(2) never reached above 1000 K, however, the HEMT structure was lifted-off by multiple laser exposures at this fluence. Therefore, instead of thermally induced decomposition, the lift-off mechanism could also be through the Ga-N bond breaking during the multiple lower-fluence high-energy 193 nm laser exposures. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664283]
