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[摘要]：The RC-based power-rail electrostatic-discharge (ESD) clamp circuit with big field-effect transistor (BigFET) layout style in the main ESD clamp n-channel metal-oxide-semiconductor (NMOS) transistor was widely used to enhance the ESD robustness of a CMOS IC fabricated in advanced CMOS processes. To further reduce the occupied layout area of the RC in the power-rail ESD clamp circuit, a new ESD-transient detection-circuit realized with smaller capacitance has been proposed and verified in a 0.13-mu m CMOS process. From the experimental results, the power-rail ESD clamp circuit with the new proposed ESD-transient detection circuit can achieve a long-enough turn-on duration and higher ESD robustness under ESD stress condition, as well as better immunity against mistrigger and latch-on event under the fast-power-on condition. |
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