【文章名】Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric - art. no. 241905
Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric - art. no. 241905
[摘要]：A top-gate field-effect device with atomic-layer-deposited Al2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO-Mg0.12Zn0.88O double heterostructure grown by laser molec
