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[摘要]：Bottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent soluble copper 1,4,8,11,15,18,22,25-octakis(hexyl) phthalocyanine as the active semiconductor layer. The compound was deposited as 70 nm thick spin-coated films onto gold source-drain electrodes supported on octadecyltrichlorosilane treated 250 nm thick SiO2 gate insulators. The performance of the OTFTs was optimised by investigating the effects of vacuum annealing of the films at temperatures between 50 degrees C and 200 degrees C, a range that included the thermotropic mesophase of the bulk material. These effects were monitored by ultraviolet-visible absorption spectroscopy, atomic force microscopy and XRD measurements. Device performance was shown to be dependent upon the annealing temperature due to structural changes of the film. Devices heat treated at 100 degrees C under vacuum (>= 10(-7) mbar) were found to exhibit the highest field-effect mobility, 0.7 cm(2) V-1 s(-1), with an on-off current modulation ratio of similar to 10(7), a reduced threshold voltage of 2.0 V and a sub-threshold swing of 1.11 V per decade. |
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