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[摘要]：Failure analysis of solar cells and model substrates coated with silicon nitride barrier thin films has led to important conclusions regarding the major factors leading to barrier degradation. Data gathered from optical densitometry, microscopy (optical, SEM, and TEM), as well as infrared spectroscopy, have revealed that nitride film delamination, because of poor adhesion to silver collection grids, and nitride oxidation, facilitated by sodium migration, were the leading causes of barrier failure. Based on this study, a new method for barrier deposition utilizing an ultrathin tantalum nitride adhesion layer was implemented. Copper indium gallium diselenide (CuIn(1-x)Ga(x)Se(2), denoted hereafter as CIGS) solar cells treated with a TaN(x)/SiN(x) thin film bilayer architecture have shown exceptional stability under accelerated damp heat conditions. Devices treated with these coatings have retained >90% of initial photovoltaic performance for an average of >1900 h at 85 degrees C/85% RH, with several devices showing damp heat survival for >3000 h. |
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