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1.52 mu m photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers

  作者 Wong, PS; Liang, BL; Lin, A; Tatebayashi, J; Huffaker, DL  
  选自 期刊  Applied Physics Letters;  卷期  2010年97-14;  页码  143111-143111  
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[摘要]InAs patterned quantum dots (PQDs) are preferentially formed on faceted GaAs pyramidal buffers using selective-area epitaxy (SAE) by metalorganic chemical vapor deposition. Photoluminescence (PL) wavelength is adjustable through a single parameter, the growth time, and strong room-temperature PL emissions from 1.3 mu m to over 1.5 mu m are demonstrated, with linear polarization from PQD's asymmetric geometries. The long wavelength emission is attributed to the large PQD size and the reduced strain within PQDs enabled by SAE. It is thus a viable technique to independently control PL wavelength while maintaining the QD density, and to address single QDs for device applications. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499287]

 
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