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Transparent flexible resistive random access memory fabricated at room temperature

作者	Seo, JW; Park, JW; Lim, KS; Kang, SJ; Hong, YH; Yang, JH; Fang, L; Sung, GY; Kim, HK

选自	期刊 Applied Physics Letters; 卷期 2009年95-13; 页码 133508-133508

关联知识点

[摘要]：We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/IT
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