Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

[摘要]：First-generation n-i-GeSn/p-Si (100) photodiode detectors with Ge0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum effici

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