In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy

[摘要]：An in situ surface passivation of InP (100) using H2S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2S-treated InP at 300 degrees C

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