Temperature dependence of the band gap of ZnSe1-xOx

[摘要]：We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe1-xOx films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen conce

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