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[摘要]：A low-cost pulsed N-2-laser has been used to successfully demonstrate the formation of self-organized conical microtexture in Si. The process is demonstrated in vacuum environment to avoid the use of SF6 gas and sulfur incorporation. The microtexture is formed with an average structure height of similar to 15 um, base diameter similar to 10 mu m, and tip-to-tip separation similar to 8 mu m. Energy dispersive x-ray spectroscopy of individual conelike structure shows that the material remains free from impurity incorporation. We have shown that the laser-induced-damage-related absorption can be successfully restored after an hour annealing at 1000 degrees C, making the material an ideal candidate for photovoltaic and other photonic applications. (C) 2011 Optical Society of America |
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