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Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions - art. no. 052105

  作者 Shang, DS; Sun, JR; Shi, L; Wang, J; Wang, ZH; Shen, BG  
  选自 期刊  Applied Physics Letters;  卷期  2009年94-5;  页码  52105-52105  
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[摘要]Current-voltage characteristics and colossal electroresistance (CER) have been experimentally investigated in the temperature range from 293 to 454 K for the Schottky junctions Au/SrTiO3:0.5 wt % Nb and Au/SrTiO3:0.05 wt % Nb. Both junctions show electron tunneling-dominated transport behavior. Postannealing of SrTiO3:0.05 wt % Nb in oxygen atmosphere causes a transition of the transport behavior from electron tunneling to thermionic emission. The CER effect appears in the junctions with the transport behavior dominated by electron tunneling and greatly weakens when thermionic emission prevails after postannealing. This result reveals the presence of a close relation between CER and electron tunneling.

 
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