| |
[摘要]：Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO2 or HfO2. In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite was found to be comparable to SiO2, typically similar to 1-3 x 10(8) V/m, while its dielectric constant is slightly higher, kappa approximate to 4.3. |
|
