[摘要]:Metal-insulator-metal (MIM) capacitors with Al2O3/TiO2/Al2O3 (ATA) dielectrics were fabricated and investigated. At 0V and frequencies of 100 kHz and 1 MHz, the MIM capacitors with ATA (3/20/3 nm) and ATA (6/20/6 nm) thin films had low leakage current den