Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition - art. no. 082103

[摘要]：We report on deep level defect incorporation in n-type m-plane (10 (1) over bar0) GaN grown by metalorganic chemical vapor deposition (MOCVD) on bulk m-plane GaN substrates. Deep levels were observed at 2.85 eV and 3.31 eV relative to the conduction band

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