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[摘要]：Radiothermoluminescence (RTL) of tetracosane irradiated in liquid nitrogen with gamma-rays is due to trapped charges. At doses below 2 kGy, all processes leading to RTL are localized in tetracosane intracrystal-line areas in traps with a depth of 0.1-2.0 eV that were present in tetracosane before irradiation. With increasing the dose, radiation-induced traps with a depth of 3 eV or higher appear in addition. At the same time, part of the charges reach the surface and become available for interaction with an electron acceptor. The presence of shallow traps (less than 0.15 eV) leads to a decrease in the RTL intensity over the entire temperature range from 100 to 300 K during storage of irradiated samples in liquid nitrogen. |
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