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[摘要]：Photoluminescence output from InAs/GaAs quantum dots has been improved by a Sb treatment immediately prior to capping with GaAs. Spectra taken at 300 and 80 K show a significant increase in output intensity when the quantum dots are exposed for 15 s under a Sb flux of approximately 0.1 monolayers per second, but this improvement is lost when the Sb exposure is extended to 30 s. There is no significant shift in the emission energies between samples indicating strain relief due to the cap layer is not responsible for the improvement. Analysis of temperature dependent photoluminescence taken between 80 and 300 K show increased activation energies at lower temperatures when an Sb spray is used, suggesting passivation of deep defect levels. For the higher temperature activation energy, corresponding to carrier escape from the QD to the barrier, whilst a 15 s Sb spray gives a substantial increase, the longer 30 s Sb spray sees the activation energy decrease, a result deduced to be due to Sb segregation providing shallow defect levels. A band structure including a very thin GaAsSb layer adjacent to the quantum dots is used to explain these results, with the 30 s Sb spray leading to shallow Sb segregation related defects and a lower activation energy. Depth dependent X-ray photoelectron spectroscopy data support the band structure proposed to explain the photoluminescence results and also reveals the highest concentration of Sb at the sample surface suggesting a 'floating layer' of Sb during growth of the GaAs cap. Some of the implications of these results, for growth of quantum dot samples and for two novel solar cell proposals, the intermediate band and hot carrier solar cells, are discussed. (C) 2011 Elsevier B.V. All rights reserved. |
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