[摘要]：A gallium-doped ZnO (GZO) layer was investigated and compared with a conventional indium-tin-oxide (ITO) layer for use as a cathode in an inverted polymer solar cell based on poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C(61) butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ). By modifying the GZO cathode with a ZnO thin layer, a high power conversion efficiency (3.4%) comparable to that of an inverted solar cell employing the same P3HT:PCBM BHJ photoactive layer with a conventional ITO/ZnO cathode was achieved. This result indicates that GZO is a transparent electrode material that can potentially be used to replace high-cost ITO. (C) 2011 Elsevier B.V. All rights reserved.
