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Ir/n-ZnO Schottky Barrier Ultraviolet Photodiodes

  作者 Young, SJ  
  选自 期刊  IEEE Sensors Journal;  卷期  2011年11-5;  页码  1129-1133  
  关联知识点  
 

[摘要]ZnO Schottky barrier photodiodes (PDs) with Iridium (Ir) contact electrodes were fabricated in this study. We could reduce the reverse leakage current and improve the performance of ZnO ultraviolet (UV) PDs by using 500 degrees C, O-2 annealing. This coul

 
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