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Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport

  作者 Ohmi, H; Goto, A; Kamada, D; Hamaoka, Y; Kakiuchi, H; Yasutake, K  
  选自 期刊  Applied Physics Letters;  卷期  2009年95-18;  页码  181506-181506  
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[摘要]Purified Si film is prepared directly from metallurgical-grade Si (MG-Si) by using hydrogen plasma induced chemical transport at subatmospheric pressure. The purification mechanism is based on the different hydrogenation behaviors of the various impurity

 
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