Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors - art. no. 021008

[摘要]：The authors report on the fabrication of thin-film transistors (TFTs) using indium-tin-zinc oxides (ITZOs) as active channel layers. Transparent amorphous ITZO semiconductors were deposited at room temperature by rf-magnetron sputtering, followed by an an

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