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[摘要]：The authors present neutral particle proximity lithography, a high resolution, parallel exposure technique where a broad beam of energetic neutral particles floods a stencil mask and transmitted beamlets transfer the mask pattern to resist on a substrate. It preserves the advantages of nanoscale penumbra, diffraction, and resist scattering of ion beam lithography (IBL) yet is intrinsically immune to charge accumulation on the mask and substrate. In a series of direct comparisons, involving insulating substrates, large proximity gaps, and ultrasmall features, the authors show that the use of neutral particles provides a simple method for completely eliminating the charging artifacts of IBL. They demonstrate the ability to print 8 nm mask features with 5 nm pattern fidelity. Exposure times are about 200 s in poly(methyl methacrylate) resist. |
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