[摘要]：A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission at 4.0 mu m using nonresonant extraction design approach, was grown by molecular beam epitaxy. Laser devices were processed in buried heterostructure geometry. An air-cooled laser system incorporating a 10-mm x 11.5-mu m laser with antireflection-coated front facet and high-reflection-coated back facet delivered over 2 W of single-ended optical power in a collimated beam. Maximum continuous-wave room temperature wall plug efficiency of 5.0% was demonstrated for a high-reflection-coated 3.65-mm x 8.7-mu m laser mounted on an aluminum nitride submount.
