Electrical-field induced giant magnetoresistivity in (non-magnetic) phase change films - art. no. 152105

[摘要]：Phase-change GeTe/Sb2Te3 multilayered structures, in which the atomic motion at the layer interfaces is limited to one dimension, have been shown to require substantially lower switching energies when compared to monolithic alloys of the same average composition. Here, we report that in the GeTe/Sb2Te3 superlattice, an extraordinarily large magnetoresistance of Delta R/R > 2000% can be induced by application of an electrical field at temperatures exceeding 400 K. This finding paves the way for development of conceptually new memory devices that combine the merits of both phase-change and magnetic data storage. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651275]

[全文传递流程]：

一般上传文献全文的时限在1个工作日内