【文章名】Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer
Electrical stabilities and memory mechanisms of organic bistable devices fabricated utilizing a poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) layer with a poly(methyl methacrylate) buffer layer
[摘要]：Organic bistable devices (OBDs) based on a poly(3,4-ethylene-dioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer with a poly(methyl methacrylate) (PMMA) buffer layer were fabricated on indium-tin-oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrates. Current-voltage curves for the Al/PEDOT: PSS/PMMA/ITO/PET device showed current bistabilities with an ON/OFF current ratio of 1 x 10(3), indicative of a significant enhancement of memory storage. The endurance number of the ON/OFF switchings for the OBDs was above 1 x 10(5) cycles showing high potential applications in read only memory devices. The memory mechanisms for the OBDs on the basis of oxidation and reduction operations were attributed to the filament processes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709399]
