[摘要]：We studied the atomic surface properties of Si(100) during preparation in a (metal-organic) vapor phase epitaxy (VPE) reactor and the impact of the hydrogen ambient. Absorption lines in Fourier-transform infrared spectra were identified as stretch modes of coupled Si-H monohydrides, in agreement with Si-dimers observed by scanning tunneling microscopy. The polarization dependence of the antisymmetric stretch mode distinguished different dimer orientations and verified a clear preference for one of the (2 x 1) / (1 x 2) surface reconstruction domains. Tip-induced H-desorption proved the complete saturation of dangling bonds after VPE-preparation. In situ reflectance anisotropy spectroscopy showed the absence of Si-H bonds at elevated annealing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497992]
