[摘要]：The optoelectronic gate light-emitting field-effect transistor (OEG LEFET) containing alternate SiO(2) and SiN(x) dielectric stacks allows enhanced light emission for a designed spectrum range and provides reliable strength for a wide operating voltage. The device can improve the emission efficiency by 4.5 times in comparison to a reference LEFET with a SiN(x) gate dielectric and can reach a brightness as high as 4500 cd/m(2).
