Microporous SiO2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thin-film transistors

[摘要]：Electric-double-layer (EDL) effect is observed in microporous SiO2 dielectric films deposited at room temperature by plasma-enhanced chemical vapor deposition method. Indium tin oxide thin-film transistors gated by such microporous SiO2 gate dielectric ar

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