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[摘要]：This letter reports the development of a ZnO-based one diode-one resistor (1D1R) device consisting of a Pt/ZnO:Al/ZnO/Pt Schottky-type diode and a Pt/ZnO/Pt memristor using a room-temperature sputtering process. The proposed 1D1R device exhibits stable switching for more than 10(3) cycles, good retention up to 10(4) s at 85 degrees C, and desirable anti-crosstalk characteristics. Thus, the proposed design shows potential for integration in a crossbar memory array. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701722] |
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