Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors - art. no. 083504

[摘要]：Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less sig

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