Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide - art. no. 082112

[摘要]：The electrical properties of thermally grown and atomic-layer-deposition (ALD) oxides, followed by nitridation treatment, on 4H-SiC substrate were compared. The nitridation treatment was performed with post oxidation annealing in NO atmosphere (NO POA). T

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