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Interface Atomic-Scale Structure and Its Impact on Quantum Electron Transport

  作者 Wang, ZC; Saito, M; Tsukimoto, S; Ikuhara, Y  
  选自 期刊  ADVANCED MATERIALS;  卷期  2009年21-48;  页码  4966-4966  
  关联知识点  
 

[摘要]Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

 
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