[摘要]：Design and analysis of ultrahigh-frequency (UHF) micropower rectifiers based on a diode-connected dynamic threshold MOSFET (DTMOST) is discussed. An analytical design model for DTMOST rectifiers is derived based on curve-fitted diode equation parameters. Several DTMOST six-stage charge-pump rectifiers were designed and fabricated using a CMOS 0.18-mu m process with deep n-well isolation. Measured results verified the design model with average accuracy of 10.85% for an input power level between -4 and 0 dBm. At the same time, three other rectifiers based on various types of transistors were fabricated on the same chip. The measured results are compared with a Schottky diode solution.
