Correlation of Raman, electrical, and optical properties of high-kappa, atomic layer deposited Al-doped TiO2 - art. no. 041807

[摘要]：Electrical characteristics of 25 nm Al-doped TiO2 (ATO) dielectric films are investigated in an effort to access the benefits of TiO2's high dielectric constant (kappa) while minimizing leakage current as needed for nanocapacitor applications. Al-doped fi

[全文传递流程]：

一般上传文献全文的时限在1个工作日内