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Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces - art. no. 040603

作者	Burek, GJ; Hwang, Y; Carter, AD; Chobpattana, V; Law, JJM; Mitchell, WJ; Thibeault, B; Stemmer, S; Rodwell, MJW

选自	期刊 Journal Of Vacuum Science & Technology B; 卷期 2011年29-4; 页码 40603-40603

关联知识点

[摘要]：The influence of different gate metal deposition processes on the electrical characteristics of dielectric/III-V interfaces is investigated. Al2O3 and HfO2 dielectrics are grown on In0.53Ga0.47As channels and top metal electrodes are deposited by either t
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