Effect of indium concentration on InGaAs channel metal-oxide-semiconductor field-effect transistors with atomic layer deposited gate dielectric - art. no. 040601

[摘要]：In0.53Ga0.47As and In0.7Ga0.3As surface channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic layer deposition of Al2O3 and ZrO2 have been fabricated and investigated. The device performance of InGaAs channel MOSFETs with variou

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