Terahertz intersubband absorption in GaN/AlGaN step quantum wells

[摘要]：We demonstrate terahertz intersubband absorptions at frequencies of 2.1 THz (lambda approximate to 143 mu m) and 4.2 THz (lambda approximate to 70 mu m) in nitride-based semiconductor quantum wells. The structures consist of a 3 nm thick GaN well, an Al0.

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