Terahertz lasing from silicon by infrared Raman scattering on bismuth centers

[摘要]：Stimulated emission at terahertz frequencies (4.5-5.8 THz) has been realized by electronic Raman scattering of infrared radiation on bismuth donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 40.53 meV which c

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