【文章名】Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
[摘要]:The Auger recombination coefficient in In0.1Ga0.9N/GaN quantum wells, emitting at 407 nm has been determined from large signal modulation measurements on lasers in which these quantum wells form the gain region. A value of 1.5x10(-30) cm(6) s(-1) is deter