Randomly packed n-SnO2 nanorods/p-SiC heterojunction light-emitting diodes

[摘要]：A layer of randomly packed n-SnO2 nanorods is grown by vapor transport method on the p-SiC(4H) substrate to realize heterojunction light-emitting diodes. Diodelike rectifying current-voltage characteristics, with a turn-on voltage of similar to 4.5 V and

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